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Product&Applications
N-type Substrate
N-type substrates are primarily used for making high-power electronic components, like Schottky barrier diodes (SBDs) and MOSFETs. When you compare them with traditional silicon-based devices, SiC devices really stand out because they can handle higher voltages, operate at faster speeds, convert energy more efficiently, and perform reliably even at high temperatures. Power conversion systems that use these advanced SiC components are proving to be much more efficient, compact, and dependable. That's why they're becoming so popular in areas like electric vehicles, solar power inverters, charging stations, industrial motor controls, rail systems, smart grids, data center power supplies, and energy storage facilities.
Product Introduction

Our n-type 4H-SiC substrates deliver precision-grade planarity (Ra < 0.1 nm, Warp ≤ 25 µm, Bow ≤ 15 µm, TTV < 5 µm), ultra-low crystallographic defectivity (total dislocation density ≤ 3 × 10³ cm⁻²) and engineered bulk resistivity (15–28 mΩ·cm). Available in 150 mm and 200 mm diameters, the wafers are production-ready for next-generation power-electronics devices.

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