1.Raw Material Synthesis

High-purity silicon powder and high-purity carbon powder are mixed in a 1:1 ratio. The mixture is heated to temperatures above 2,000°C in a reaction chamber to synthesize silicon carbide particles with specific crystal forms and particle sizes. Through processes such as crushing, screening, and cleaning, high-purity SiC powder raw material meeting the requirements is obtained

2.ISingle Crystal Growth

The SiC powder is placed in a high-temperature reaction furnace and heated. Through sublimation and temperature field control, the vaporized components recrystallize on the seed crystal surface, forming a silicon carbide single crystal

3.Ingot Processing

An X-ray single crystal orienter is used to determine the crystal’s orientation and growth direction. The oriented ingot then undergoes processes like flattening and cylindrical grinding to remove surface irregularities and defects, shaping it into a standard-diameter silicon carbide crystal

4.Crystal Slicing

The grown silicon carbide single crystal is sliced into thin wafers. Due to silicon carbide’s extreme hardness (second only to diamond) and high brittleness, the slicing process is time-consuming and prone to cracking.Slicing techniques include slurry wire sawing and diamond wire sawing, with diamond wire sawing offering advantages such as higher speed, higher yield, and environmental benefits.

5.Wafer Polishing

The sliced silicon carbide wafers are ground to reduce thickness and meet required substrate specifications. After grinding, polishing—including mechanical polishing and chemical mechanical polishing (CMP)—is performed to enhance surface smoothness and flatness. The polished substrate surface must achieve an atomic-level smoothness to meet the quality requirements for epitaxial processes

6.Cleaning and Packaging

The polished silicon carbide substrates undergo thorough cleaning to remove residual polishing slurry and particles. Comprehensive quality inspections are conducted, including assessments of surface quality, thickness uniformity, and defect density, to ensure the substrates meet the manufacturing requirements for high-performance electronic devices